* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 3A R DS(ON) (m Ω) Max 83 @ VGS= 10V 107 @ VGS= 4.5V D S OT 23 D S G G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltag
STS6308
SamHop Microelectronics
172.44 KB
N-channel mosfet.
Green Product
STS6308
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
60V
FEATUR.
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