* Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-26 package. ID -3.2A R DS(ON) (m Ω) Max 110 @ VGS=-10V 160 @ VGS=-4.5V S OT26 Top View D D D G 1 2 3 6 5 4 D D S G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Para
STS6601
SamHop Microelectronics
184.11 KB
P-channel enhancement mode field effect transistor.
Green Product
STS6601
Ver 1.0
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
-60V
FEATU.
📁 Related Datasheet
STS6604L Dual Enhancement Mode Field Effect Transistor (SamHop)
STS6308 N-Channel MOSFET (SamHop Microelectronics)
STS6409 P-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STS6415 P-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STS65R190DS2 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)
STS65R190FS2 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)
STS65R190L8AS2 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)
STS65R190SS2 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)
STS65R190TS2 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)
STS65R280DS2 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)
TAGS
Image Gallery
