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STS65R280DS2

650V SUPER JUNCTION MOS POWER TRANSISTOR

STS65R280DS2 Features

* 14A, 650V, RDS(on)(typ.)=0.24@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant 2 1 3 1.G

STS65R280DS2 General Description

STS65R280D(F)(S)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior th.

STS65R280DS2 Datasheet (581.00 KB)

Preview of STS65R280DS2 PDF

Datasheet Details

Part number:

STS65R280DS2

Manufacturer:

Silan Microelectronics

File Size:

581.00 KB

Description:

650v super junction mos power transistor.

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STS65R280DS2 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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