SVF10N60CF Datasheet - Silan Microelectronics

SVF10N60CF 600V N-CHANNEL MOSFET

SVF10N60CF/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved cell and guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performan.

SVF10N60CF Features

* 10A,600V,RDS(on)(typ.)=0.75@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability NOMENCLATURE 2 11 23 3 1.Gate 2.Drain 3.Source TO-220FJD-3L 1 23 TO-220F-3L 1 23 TO-220-3L SVFXNEXXCX Silan VDMOS Code of F-Cell process Nominal current,using 1 o

SVF10N60CF-SilanMicroelectronics.pdf