SVF10N60CFJ Datasheet - Silan Microelectronics

SVF10N60CFJ 600V N-CHANNEL MOSFET

SVF10N60CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance,.

SVF10N60CFJ Features

* 10A, 600V, RDS(on)(typ.)=0.75@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3.Source 1 23 TO-220FJ-3L ORDERING INFORMATION Part No. SVF10N60CFJ Package TO-220FJ-3L Marking 10N60CFJ Hazardous Substance

SVF10N60CFJ-SilanMicroelectronics.pdf