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SVF10N70FJ, SVF10N70F Datasheet - Silan Microelectronics

SVF10N70FJ 700V N-CHANNEL MOSFET

SVF10N70F/FJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching p.

SVF10N70FJ Features

* 10A,700V,RDS(on)(typ.)=0.95@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3.Source 123 TO-220F-3L 123 TO-220FJ-3L SVFXNEXXX Silan VDMOS Code of F-Cell process Nominal current,using 1 or 2 digits: Exampl

SVF10N70F-SilanMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: SVF10N70FJ, SVF10N70F. Please refer to the document for exact specifications by model.
SVF10N70FJ Datasheet Preview Page 2 SVF10N70FJ Datasheet Preview Page 3

Datasheet Details

Part number:

SVF10N70FJ, SVF10N70F

Manufacturer:

Silan Microelectronics

File Size:

283.46 KB

Description:

700v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVF10N70FJ, SVF10N70F.
Please refer to the document for exact specifications by model.

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SVF10N70FJ SVF10N70F 700V N-CHANNEL MOSFET Silan Microelectronics

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