SVF12N65CFJ Datasheet - Silan Microelectronics

SVF12N65CFJ 650V N-CHANNEL MOSFET

0B SVF12N65CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching.

SVF12N65CFJ Features

* 1B

* 12A,650V,RDS(on)(typ.)=0.64Ω@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF12N65CFJ Package TO-220FJ-3L Marking 12N65CFJ Hazardous Substance Control Halogen free Packing Tube HANGZHOU SI

SVF12N65CFJ-SilanMicroelectronics.pdf