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SVF12N65RFJH, SVF12N65RF Datasheet - Silan Microelectronics

SVF12N65RFJH 650V N-CHANNEL MOSFET

The SVF12N65RF(FJH) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching perf.

SVF12N65RFJH Features

* 12A, 650V, RDS(on)(typ.)= 0.64@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 1 23 1 23 TO-220FJH-3L TO-220F-3L NOMENCLATURE Silan VDMOS Code of F-Cell process SVF XNXXRX Package information. Example: FJH

SVF12N65RF-SilanMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: SVF12N65RFJH, SVF12N65RF. Please refer to the document for exact specifications by model.
SVF12N65RFJH Datasheet Preview Page 2 SVF12N65RFJH Datasheet Preview Page 3

Datasheet Details

Part number:

SVF12N65RFJH, SVF12N65RF

Manufacturer:

Silan Microelectronics

File Size:

285.88 KB

Description:

650v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVF12N65RFJH, SVF12N65RF.
Please refer to the document for exact specifications by model.

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SVF12N65RFJH SVF12N65RF 650V N-CHANNEL MOSFET Silan Microelectronics

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