SVF12N65RF Datasheet - Silan Microelectronics

SVF12N65RF 650V N-CHANNEL MOSFET

The SVF12N65RF(FJH) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching perf.

SVF12N65RF Features

* 12A, 650V, RDS(on)(typ.)= 0.64@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 1 23 1 23 TO-220FJH-3L TO-220F-3L NOMENCLATURE Silan VDMOS Code of F-Cell process SVF XNXXRX Package information. Example: FJH

SVF12N65RF-SilanMicroelectronics.pdf