SVF12N65T Datasheet (Silan Microelectronics)

SVF12N65T, 650V N-CHANNEL MOSFET

SVF12N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide su

SVF12N65T Features

* ∗ 12A,650V,RDS(on)(typ)=0.68Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF12N65T SVF12N65F Package TO-220-3L TO-220F-3L Marking SVF12N65T SVF12N65F Material Pb free Pb free Packing Tube Tube HANGZHOU SILAN MICROEL