SVF18N65T, SVF18N65F Datasheet - Silan Microelectronics

SVF18N65T 650V N-CHANNEL MOSFET

2 SVF18N65F/T/PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switc.

SVF18N65T Features

* 1 3 12 3 TO-220-3L 1.Gate 2.Drain 3.Source 12 3 TO-3P 12 3 TO-220F-3L

* 18A,650V,RDS(on)(typ.)=0.48@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability ORDERING INFORMATION Part No. SVF18N65F SVF18N65T SVF18N65PN Package TO-220F-3L TO-220-3L

SVF18N65F-SilanMicroelectronics.pdf

SVF18N65T Datasheet Preview — This datasheet PDF includes multiple part numbers: SVF18N65T, SVF18N65F. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVF18N65T, SVF18N65F

Manufacturer:

Silan Microelectronics

File Size:

316.37 KB

Description:

650v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVF18N65T, SVF18N65F.
Please refer to the document for exact specifications by model.

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SVF18N65T SVF18N65F 650V N-CHANNEL MOSFET Silan Microelectronics

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