Description
2
SVF18N65F/T/PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.FEATURE
Features
- 1
3 12 3 TO-220-3L
1.Gate 2.Drain 3.Source
12 3
TO-3P
12 3
TO-220F-3L.
- 18A,650V,RDS(on)(typ. )=0.48@VGS=10V.
- Low gate charge.
- Low Crss.
- Fast switching.
- Improved dv/dt capability.