SVF6N60FQ, SVF6N60DTR Datasheet - Silan Microelectronics

SVF6N60FQ - 600V N-CHANNEL MOSFET

SVF6N60F/D/FQ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching .

SVF6N60FQ Features

* 6A,600V,RDS(on(typ.)=1.35@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF6N60F SVF6N60DTR SVF6N60FQ Package TO-220F-3L TO-252-2L TO-220FQ-3L Marking SVF6N60F SVF6N60D SVF6N60FQ Hazardous subs

SVF6N60DTR-SilanMicroelectronics.pdf