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SVF7N65RDTR, SVF7N65RMJ Datasheet - Silan Microelectronics

SVF7N65RDTR 650V N-CHANNEL MOSFET

SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching.

SVF7N65RDTR Features

* 2 1 13 3 TO-252-2L 1.Gate 2.Drain 3.Source 12 3 TO-220-3L 12 3 TO-251J-3L

* 7A, 650V, RDS(on)(typ.)=1.2@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability 12 3 TO-220F-3L 1 2 3 TO-220FJH-3L ORDERING INFORMATION Part No. SVF7N65RMJ SVF

SVF7N65RMJ-SilanMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: SVF7N65RDTR, SVF7N65RMJ. Please refer to the document for exact specifications by model.
SVF7N65RDTR Datasheet Preview Page 2 SVF7N65RDTR Datasheet Preview Page 3

Datasheet Details

Part number:

SVF7N65RDTR, SVF7N65RMJ

Manufacturer:

Silan Microelectronics

File Size:

377.81 KB

Description:

650v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVF7N65RDTR, SVF7N65RMJ.
Please refer to the document for exact specifications by model.

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TAGS

SVF7N65RDTR SVF7N65RMJ 650V N-CHANNEL MOSFET Silan Microelectronics

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