SVF7N65RMJ Datasheet (Silan Microelectronics)

SVF7N65RMJ, 650V N-CHANNEL MOSFET

SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching

SVF7N65RMJ Features

* 2 1 13 3 TO-252-2L 1.Gate 2.Drain 3.Source 12 3 TO-220-3L 12 3 TO-251J-3L

* 7A, 650V, RDS(on)(typ.)=1.2@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability 12 3 TO-220F-3L 1 2 3 TO-220FJH-3L ORDERING INFORMATION Part No. SVF7N65RMJ SVF