SVF9N90F Datasheet (Silan Microelectronics)

SVF9N90F, 900V N-CHANNEL MOSFET

SVF9N90F/PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide su

SVF9N90F Features

* ∗ 9A, 900V, RDS(on) (typ.)=1.10Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF9N90F SVF9N90PN Package TO-220F-3L TO-3PN Marking SVF9N90F 9N90 Material Pb free Pb free Packing Tube Tube HANGZHOU SILAN MICROELECT