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SVF9N90F

900V N-CHANNEL MOSFET

SVF9N90F Features

* ∗ 9A, 900V, RDS(on) (typ.)=1.10Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF9N90F SVF9N90PN Package TO-220F-3L TO-3PN Marking SVF9N90F 9N90 Material Pb free Pb free Packing Tube Tube HANGZHOU SILAN MICROELECT

SVF9N90F General Description

SVF9N90F/PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide su.

SVF9N90F Datasheet (404.51 KB)

Preview of SVF9N90F PDF

Datasheet Details

Part number:

SVF9N90F

Manufacturer:

Silan Microelectronics

File Size:

404.51 KB

Description:

900v n-channel mosfet.

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SVF9N90F 900V N-CHANNEL MOSFET Silan Microelectronics

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