SVF9NE80F Datasheet (Silan Microelectronics)

SVF9NE80F, MOSFET

SVF9NE80F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide supe

SVF9NE80F Features

* ∗ 9A,800V,RDS(on)(typ.)=0.78Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF9NE80F Package TO-220F-3L Marking SVF9NE80F Material Pb free Packing Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.