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SVG076R5ND, SVG076R5NT Datasheet - Silan Microelectronics

SVG076R5ND 70V N-CHANNEL MOSFET

SVG076R5NT(S)(D)(KL) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is wide.

SVG076R5ND Features

* 100A, 70V, RDS(on)(typ.)=5.4m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-263-2L 123 TO-262L-3L 1 2 3 TO-220-3L 13 TO-252-2L ORDERING INFORMATION Part No. SVG076R5NT SVG076R5NS SVG076R5NSTR SVG0

SVG076R5NT-SilanMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: SVG076R5ND, SVG076R5NT. Please refer to the document for exact specifications by model.
SVG076R5ND Datasheet Preview Page 2 SVG076R5ND Datasheet Preview Page 3

Datasheet Details

Part number:

SVG076R5ND, SVG076R5NT

Manufacturer:

Silan Microelectronics

File Size:

395.22 KB

Description:

70v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVG076R5ND, SVG076R5NT.
Please refer to the document for exact specifications by model.

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SVG076R5ND SVG076R5NT 70V N-CHANNEL MOSFET Silan Microelectronics

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