SVGP103R0NT Datasheet (Silan Microelectronics)

SVGP103R0NT, 100V N-CHANNEL MOSFET

SVGP103R0NT(P7) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

This device is widely us

SVGP103R0NT Features

* 180A, 100V, RDS(on)(typ.)=2.5m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Extreme dv/dt rated

* 100% avalanche tested

* Pb-free lead plating

* RoHS compliant 123 TO-220-3L TO-247-3L FEATURES Characteristics VDS VGS(th) RDS(on),max. ID Qg.typ. Ratin