SVS12N80F

800V DP MOS POWER TRANSISTOR

Silan Microelectronics

SVS12N80F Features

* 12A,800V, RDS(on)(typ.)=0.37@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 2 1 12 3 3 1.Gate 2.Drain 3.Source TO-220FJ-3L 12 3 12 3 TO-220FJH-3L TO-3P 12 3 T

SVS12N80F General Description

SVS12N80F/FJ/S/FJH/PN is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal beh.

SVS12N80F Datasheet (366.92 KB)

SVS12N80F Datasheet Preview — Preview of SVS12N80F PDF

Datasheet Details

Part number:

SVS12N80F

Manufacturer:

Silan Microelectronics

File Size:

366.92 KB

Description:

800v dp mos power transistor.

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SVS12N80F 800V MOS POWER TRANSISTOR Silan Microelectronics

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SVS12N80F Features

SVS12N80F General Description

Datasheet Details

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Description:

SVS12N80F Distributor