SVS12N80F Datasheet - Silan Microelectronics

SVS12N80F, 800V DP MOS POWER TRANSISTOR

Silan Microelectronics SVS12N80F/FJ/S/FJH/PN_Datasheet 12A, 800V DP MOS POWER TRANSISTOR .
SVS12N80F/FJ/S/FJH/PN is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.

Features

* 12A,800V, RDS(on)(typ. )=0.37@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability 2 1 12 3 3 1.Gate 2.Drain 3.Source TO-220FJ-3L 12 3 12 3 TO-220FJH-3L TO-3P 12 3 T

SVS12N80F-SilanMicroelectronics.pdf