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SVS12N80FJ, SVS12N80F Datasheet - Silan Microelectronics

SVS12N80FJ 800V DP MOS POWER TRANSISTOR

SVS12N80F/FJ/S/FJH/PN is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal beh.

SVS12N80FJ Features

* 12A,800V, RDS(on)(typ.)=0.37@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 2 1 12 3 3 1.Gate 2.Drain 3.Source TO-220FJ-3L 12 3 12 3 TO-220FJH-3L TO-3P 12 3 T

SVS12N80F-SilanMicroelectronics.pdf

SVS12N80FJ Datasheet Preview — This datasheet PDF includes multiple part numbers: SVS12N80FJ, SVS12N80F. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVS12N80FJ, SVS12N80F

Manufacturer:

Silan Microelectronics

File Size:

366.92 KB

Description:

800v dp mos power transistor.

Note:

This datasheet PDF includes multiple part numbers: SVS12N80FJ, SVS12N80F.
Please refer to the document for exact specifications by model.

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SVS12N80FJ SVS12N80F 800V MOS POWER TRANSISTOR Silan Microelectronics

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