SVS12N80FJ, SVS12N80F - 800V DP MOS POWER TRANSISTOR

Silan Microelectronics

Datasheet Details

Part number	SVS12N80FJ, SVS12N80F
Manufacturer	Silan Microelectronics
File Size	366.92 KB
Description	800V DP MOS POWER TRANSISTOR
Datasheet	SVS12N80F-SilanMicroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: SVS12N80FJ, SVS12N80F. Please refer to the document for exact specifications by model.

SVS12N80F/FJ/S/FJH/PN is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.

12A,800V, RDS(on)(typ. )=0.37@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Periodic avalanche rated.
Extreme dv/dt rated.
High peak current capability 2 1 12 3 3 1.Gate 2.Drain 3.Source TO-220FJ-3L 12 3 12 3 TO-220FJH-3L TO-3P 12 3 TO-220F-3L 1 3 TO-263-2L.

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Published: Mar 9, 2020 |