SVS12N80S

800V DP MOS POWER TRANSISTOR

Silan Microelectronics

SVS12N80S Features

* 12A,800V, RDS(on)(typ.)=0.37@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 2 1 12 3 3 1.Gate 2.Drain 3.Source TO-220FJ-3L 12 3 12 3 TO-220FJH-3L TO-3P 12 3 T

SVS12N80S General Description

SVS12N80F/FJ/S/FJH/PN is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal beh.

SVS12N80S Datasheet (366.92 KB)

SVS12N80S Datasheet Preview — Preview of SVS12N80S PDF

Datasheet Details

Part number:

SVS12N80S

Manufacturer:

Silan Microelectronics

File Size:

366.92 KB

Description:

800v dp mos power transistor.

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SVS12N80S 800V MOS POWER TRANSISTOR Silan Microelectronics

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SVS12N80S Features

SVS12N80S General Description

Datasheet Details

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Description:

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