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SVT068R5NS, SVT068R5NT Datasheet - Silan Microelectronics

SVT068R5NT-SilanMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: SVT068R5NS, SVT068R5NT. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

SVT068R5NS, SVT068R5NT

Manufacturer:

Silan Microelectronics

File Size:

358.71 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVT068R5NS, SVT068R5NT.
Please refer to the document for exact specifications by model.

SVT068R5NS, SVT068R5NT, N-CHANNEL MOSFET

SVT068R5NT/D/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

These devices are wide

SVT068R5NS Features

* 80A, 60V, RDS(on)(typ.)=7.0m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability 2 S1 8D S2 7D 1 S3 6D G4 5D 3 1.Gate 2.Drain 3.Source 13 TO-252-2L PDFN-8-5X6X0.95-1.27 1 2 3 TO-220-3L 1 3 TO-263-2L ORDERING INFORMATION Part No. S

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