SVT068R5NT Datasheet (Silan Microelectronics)

SVT068R5NT, N-CHANNEL MOSFET

SVT068R5NT/D/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

These devices are wide

SVT068R5NT Features

* 80A, 60V, RDS(on)(typ.)=7.0m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability 2 S1 8D S2 7D 1 S3 6D G4 5D 3 1.Gate 2.Drain 3.Source 13 TO-252-2L PDFN-8-5X6X0.95-1.27 1 2 3 TO-220-3L 1 3 TO-263-2L ORDERING INFORMATION Part No. S