SVT085R5NT Datasheet - Silan Microelectronics

SVT085R5NT 85V N-CHANNEL MOSFET

The SVT085R5NT/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widel.

SVT085R5NT Features

* 120A，85V，RDS(on)(typ.)=4.5m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability 2 S1 8D S2 7D 1 S3 6D G4 5D 3 1.Gate 2.Drain 3.Source 8 765 1 2 34 PDFN-8-5X6X0.95-1.27 1 2 3 TO-220-3L 1 3 TO-263-2L ORDERING INFORMATION Part No. S

SVT085R5NT-SilanMicroelectronics.pdf