SSPL2015 N-Channel enhancement mode power field effect transistors

Silikron Semiconductor

SSPL2015 Description

Main Product Characteristics: VDSS 200V RDS(on) 0.13ohm(typ.) ID 18A ① .
These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

SSPL2015 Features

* Advanced Process Technology

SSPL2015 Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

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SSPL2015 Datasheet Preview — Preview of SSPL2015 PDF

Datasheet Details

Part number: SSPL2015
Manufacturer: SilikrON Semiconductor ↗
File Size: 544.07 KB
Datasheet: SSPL2015-SilikronSemiconductor.pdf
Description: N-Channel enhancement mode power field effect transistors

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N-Channel enhancement mode power field effect transistors Silikron Semiconductor

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