Description
MBR30100PT thru MBR30200PT High Tjm Low IRRM Schottky Barrier Diodes AC A C(TAB) A C A A=Anode, C=Cathode, TAB=Cathode VRRM VRMS VDC V V V .
Features
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection
Applications
* RoHS compliant
MECHANICAL DATA
* Case: TO-247AD molded plastic
* Polarity: As marked on the body
* Weight: 6 grams
* Mounting position: Any
Unit A A
V/us
V
mA oC/W
pF oC oC
P1
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