SLW5020
Sunltech
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Wire wound smd power inductor.
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SLW5020S - Wire Wound SMD Power Inductor
(Sunltech)
SLW5020S Series
Wire Wound SMD Power Inductor
◆ Features
1、Magnetic-resin shielded construction reduces buzz noise to ultra-low levels;
2、Metallizati.
SLW5040 - Wire Wound SMD Power Inductor
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◆ Features
1、Magnetic-resin shielded construction reduces buzz noise to ultra-low levels;
2、Metallization on ferrite core results in excellent shock r.
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This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technolo.
SLW10N80UZ - N-Channel MOSFET
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SLW10N80UZ
SLW10N80UZ
800V N-Channel MOSFET
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This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technolo.
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SLW18N50C
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This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
SLW201610S - Wire Wound SMD Power Inductor
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SLW201610S Series
Wire Wound SMD Power Inductor
◆ Features
1、Magnetic-resin shielded construction reduces buzz noise to ultra-low levels;
2、Metalliza.
SLW20N50C - N-Channel MOSFET
(SL SEMI)
SLW20N50C
500V N-Channel MOSFET
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This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanc.
SLW24N50C - N-Channel MOSFET
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SLW24N50C
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500V N-Channel MOSFET
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This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
SLW252010 - Wire Wound SMD Power Inductor
(Sunltech)
◆ Features
1、Magnetic-resin shielded construction reduces buzz noise to ultra-low levels;
2、Metallization on ferrite core results in excellent shock r.
SLW252012 - Wire Wound SMD Power Inductor
(Sunltech)
◆ Features
1、Magnetic-resin shielded construction reduces buzz noise to ultra-low levels;
2、Metallization on ferrite core results in excellent shock r.