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SGB100N025 - 100V N-Channel MOSFET

SGB100N025 Description

SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power MOSFET SG *100N025 Rev.1.1 Jul.2021 ww.
The SG-MOSFET uses advanced trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.

SGB100N025 Features

* VDS 100V
* ID (at Vgs=10V) 180A
* Extremely low on-resistance RDS(on)
* Extremely Qg×RDS(on) product(FOM)
* 100% avalanche tested SGB100N025 SGP100N025 SGW100N025 Absolute Maximum Ratings Symbol Parameter VDS ID IDM VGS IAS EAS PD TJ, TSTG Dra

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Datasheet Details

Part number
SGB100N025
Manufacturer
Super Semiconductor
File Size
620.46 KB
Datasheet
SGB100N025-SuperSemiconductor.pdf
Description
100V N-Channel MOSFET

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