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FDN8601 Datasheet - TY Semiconductor

N-Channel MOSFET

FDN8601 Features

* Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A

* Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A

* High performance trench technology for extremely low rDS(on)

* High power and current handling capability in a widely used surface mount package

* Fast switching

FDN8601 General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Applications * Primary DC-DC Switch * Load Switch MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Sym.

FDN8601 Datasheet (510.09 KB)

Preview of FDN8601 PDF

Datasheet Details

Part number:

FDN8601

Manufacturer:

TY Semiconductor

File Size:

510.09 KB

Description:

N-channel mosfet.

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FDN8601 N-Channel MOSFET TY Semiconductor

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