FDN8601 Datasheet (TY Semiconductor)

FDN8601, N-Channel MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

Applications * Primary DC-DC Switch * Load Switch MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Sym

FDN8601 Features

* Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A

* Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A

* High performance trench technology for extremely low rDS(on)

* High power and current handling capability in a widely used surface mount package

* Fast switching