FDN8601 Datasheet, Mosfet, TY Semiconductor

✔ FDN8601 Features

Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A
Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A
High performance trench technology for extremely low rDS(on)
High pow

✔ FDN8601 Application

Primary DC-DC Switch
Load Switch MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VG

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FDN8601

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TY Semiconductor

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📄 Datasheet

Description:

N-channel mosfet. This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on),

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Stock and price

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MOSFET N-CH 100V 2.7A SUPERSOT3

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FDN8601

21000 In Stock

Qty : 9000 units

Unit Price : $0.37

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FDN8601 N-Channel MOSFET TY Semiconductor