FDN8601 N-Channel MOSFET

TY Semiconductor

Description

SMD Type Product specification FDN8601 100 V, 2.7 A, 109 m: .
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching perfor.

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Datasheet Specifications

Part number: FDN8601
Manufacturer: TY Semiconductor
File Size: 510.09 KB
Datasheet: FDN8601-TYSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A
* Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability in a widely used surface mount package
* Fast switching

Applications

* Primary DC-DC Switch
* Load Switch MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating an

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FDN8601 N-Channel MOSFET TY Semiconductor

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