FDN86501LZ Datasheet - Fairchild Semiconductor

MOSFET

FDN86501LZ General Description

* Shielded Gate MOSFET Technology * Max rDS(on) = 116 mΩ at VGS = 10 V, ID = 2.6 A * Max rDS(on) = 173 mΩ at VGS = 4.5 V, ID = 2.1 A * High performance trench technology for extremely low rDS(on) * High power and current handling capability in a widely used s.

FDN86501LZ Datasheet (593.69 KB)

FDN86501LZ Datasheet Preview — Preview of FDN86501LZ PDF

Datasheet Details

Part number:

FDN86501LZ

Manufacturer:

Fairchild Semiconductor

File Size:

593.69 KB

Description:

Mosfet.
FDN86501LZ N-Channel Shielded Gate PowerTrench® MOSFET October 2015 FDN86501LZ N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 2.6 A, 116 mΩ Fe.

📁 Related Datasheet

FDN86501LZ N-Channel MOSFET (ON Semiconductor)

FDN8601 MOSFET (Fairchild Semiconductor)

FDN8601 N-Channel MOSFET (TY Semiconductor)

FDN8601 N-Channel MOSFET (ON Semiconductor)

FDN86246 MOSFET (Fairchild Semiconductor)

FDN86246 N-Channel MOSFET (ON Semiconductor)

FDN86265P MOSFET (Fairchild Semiconductor)

FDN86265P P-Channel MOSFET (ON Semiconductor)

FDN028N20 N-Channel MOSFET (ON Semiconductor)

FDN302P P-Channel MOSFET (Fairchild Semiconductor)

TAGS

FDN86501LZ MOSFET Fairchild Semiconductor

Image Gallery

FDN86501LZ General Description

Datasheet Details

File Size:

Description:

FDN86501LZ Distributor