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FDN86501LZ Datasheet - Fairchild Semiconductor

FDN86501LZ MOSFET

* Shielded Gate MOSFET Technology * Max rDS(on) = 116 mΩ at VGS = 10 V, ID = 2.6 A * Max rDS(on) = 173 mΩ at VGS = 4.5 V, ID = 2.1 A * High performance trench technology for extremely low rDS(on) * High power and current handling capability in a widely used s.

FDN86501LZ-FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FDN86501LZ

Manufacturer:

Fairchild Semiconductor

File Size:

593.69 KB

Description:

Mosfet.

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