FDN8601 MOSFET

Fairchild Semiconductor

Description

FDN8601 N-Channel PowerTrench® MOSFET FDN8601 N-Channel PowerTrench® MOSFET 100 V, 2.7 A, 109 m: July 2010 .
Max rDS(on) = 109 m: at VGS = 10 V, ID = 1. Max rDS(on) = 175 m: at VGS = 6 V, ID = 1. High performance trench te.

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Datasheet Specifications

Part number: FDN8601
Manufacturer: Fairchild Semiconductor
File Size: 181.80 KB
Datasheet: FDN8601-FairchildSemiconductor.pdf
Description: MOSFET

Applications

* Primary DC-DC Switch
* Load Switch
* RoHS Compliant MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Po

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FDN8601 MOSFET Fairchild Semiconductor

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