Datasheet Details
| Part number | FDN8601 |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 181.80 KB |
| Description | MOSFET |
| Datasheet |
 FDN8601-FairchildSemiconductor.pdf
|
| Part number | FDN8601 |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 181.80 KB |
| Description | MOSFET |
| Datasheet |
FDN8601-FairchildSemiconductor.pdf
|
Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and rugge
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