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FDN86246 - MOSFET

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FDN86246 Product details

Description

Max rDS(on) = 261 m: at VGS = 10 V, ID = 1.6 A Max rDS(on) = 359 m: at VGS = 6 V, ID = 1.4 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.Application

Features

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