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TSM3N80 N-Channel Power MOSFET

TSM3N80 Description

TSM3N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V) 800 RDS(on)(Ω) 4.2 @ VGS =10V .
TO-251 (IPAK) TO-252 (DPAK) The TSM3N80 N-Channel Power MOSFET is produced by new advance planar process.

TSM3N80 Features

* Low RDS(ON) 3.3Ω (Typ. ) Low gate charge typical @ 19nC (Typ. ) Low Crss typical @ 10.2pF (Typ. ) Improved dv/dt capability Block Diagram Ordering Information Part No. TSM3N80CH C5G TSM3N80CP ROG TSM3N80CZ C0 Package TO-251 TO-252 TO-220 Packing 75pcs / Tube 2.5Kpcs / 13” Re

TSM3N80 Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 12/12 Version: C13

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Datasheet Details

Part number
TSM3N80
Manufacturer
Taiwan Semiconductor
File Size
803.60 KB
Datasheet
TSM3N80-TaiwanSemiconductor.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Taiwan Semiconductor
Taiwan Semiconductor TSM3N80-like datasheet