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TSM3N90 900V N-Channel Power MOSFET

TSM3N90 Description

TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V) 900 RDS(on)(Ω) 5.1 @ VGS =10V .
TO-251 (IPAK) TO-252 (DPAK) The TSM3N90 N-Channel Power MOSFET is produced by new advance planar process.

TSM3N90 Features

* Low RDS(ON) 4.3Ω (Typ. ) Low gate charge typical @ 17nC (Typ. ) Low Crss typical @ 8.7pF (Typ. ) Block Diagram Ordering Information Part No. TSM3N90CH C5G TSM3N90CP ROG TSM3N90CZ C0 Package TO-251 TO-252 TO-220 Packing 75pcs / Tube 2.5Kpcs / 13” Reel 50pcs / Tube 50pcs / Tube N-Ch

TSM3N90 Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 12/12 Version: C13

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Datasheet Details

Part number
TSM3N90
Manufacturer
Taiwan Semiconductor
File Size
555.79 KB
Datasheet
TSM3N90-TaiwanSemiconductor.pdf
Description
900V N-Channel Power MOSFET

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900V N-Channel Power MOSFET Taiwan Semiconductor
Taiwan Semiconductor TSM3N90-like datasheet