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TSM9N90 900V N-Channel Power MOSFET

TSM9N90 Description

TSM9N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 900 1.4 @ VGS =10V .
The TSM9N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

TSM9N90 Features

* Low RDS(ON) 1.4Ω (Max. ) Low gate charge typical @ 65nC (Typ. ) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM9N90CZ C0G Package TO-220 Packing 50pcs / Tube TSM9N90CI C0G ITO-220 50pcs / Tube Note: “G” denote for Halogen Free Product N-Channel MOSFET A

TSM9N90 Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 10/10 Version: B13

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Datasheet Details

Part number
TSM9N90
Manufacturer
Taiwan Semiconductor
File Size
491.56 KB
Datasheet
TSM9N90-TaiwanSemiconductor.pdf
Description
900V N-Channel Power MOSFET

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900V N-Channel Power MOSFET Taiwan Semiconductor
Taiwan Semiconductor TSM9N90-like datasheet