2SA1150 Datasheet - Toshiba Semiconductor

2SA1150 TRANSISTOR

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 2SA1150 Low Frequency Amplifier Applications Unit: mm High hFE: hFE = 100~320 Complementary to 2SC2710. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector current IC 800 mA Base current IB 160 mA Collector power d.

2SA1150_ToshibaSemiconductor.pdf