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2SA1150 TRANSISTOR

2SA1150 Description

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 2SA1150 Low Frequency Amplifier Applications Unit: mm * High hFE: hFE .

2SA1150 Applications

* Unit: mm
* High hFE: hFE = 100~320
* Complementary to 2SC2710. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO
* 35 V Collector-emitter voltage VCEO
* 30 V Emitter-base voltage VEBO
* 5 V Collector

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TRANSISTOR Toshiba Semiconductor
Toshiba Semiconductor 2SA1150-like datasheet