2SA1150 Datasheet - Toshiba Semiconductor

2SA1150, TRANSISTOR

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 2SA1150 Low Frequency Amplifier Applications Unit: mm * High hFE: hFE .

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2SA1150_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SA1150

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

157.80 KB

Description:

TRANSISTOR

Applications

* Unit: mm
* High hFE: hFE = 100~320
* Complementary to 2SC2710. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO
* 35 V Collector-emitter voltage VCEO
* 30 V Emitter-base voltage VEBO
* 5 V Collector

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