2SA1160 Datasheet - Toshiba Semiconductor

2SA1160 Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications 2SA1160 Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = 1 V, IC = 4 A) Low saturation voltage : VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) Absolute Maximum Ratings (Ta = 25°C) Charac.

2SA1160 Features

* s (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in co

2SA1160_ToshibaSemiconductor.pdf