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2SA1160 Silicon PNP Epitaxial Type Transistor

2SA1160 Description

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications 2SA1160 Unit: mm <.

2SA1160 Features

* s (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U. S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in co

2SA1160 Applications

* Medium Power Amplifier Applications 2SA1160 Unit: mm
* High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE =
* 1 V, IC =
* 0.5 A) : hFE (2) = 60 (min), 120 (typ. ) (VCE =
* 1 V, IC =
* 4 A)
* Low saturation voltage : VCE (sat) =

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Silicon PNP Epitaxial Type Transistor Toshiba Semiconductor
Toshiba Semiconductor 2SA1160-like datasheet