2SA1158 Datasheet - Toshiba

SILICON PNP TRANSISTOR

* . High Breakdwon Voltage : VceO=-80V . Low Noise Figure : NF=ldB(Typ.) , 10dB(Max.) . Excellent hpE Linearity : hFE (0

* 1mA) /hFE (2mA) =0 . 90 (Typ .

* Complementary to 2SC2868. Unit in mm 51MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Vo

2SA1158

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Silicon pnp transistor.

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2SA1158 SILICON PNP TRANSISTOR Toshiba

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