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2SA2061 - Silicon PNP Transistor

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Part number 2SA2061
Manufacturer Toshiba Semiconductor
File Size 155.83 KB
Description Silicon PNP Transistor
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TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2061 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SA2061 Unit: mm • High DC current gain: hFE = 200 to 500 (IC = −0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max) • High-speed switching: tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −20 V Collector-emitter voltage VCEO −20 V Emitter-base voltage VEBO −7 V Collector current Base current Collector power dissipation DC Pulse t = 10 s DC IC −2.5 A ICP −4 IB −250 mA PC 1 W (Note 1) 0.625 JEDEC JEITA TOSHIBA ― ― 2-3S1C Junction temperature Tj 150 °C Weight: 0.01 g (typ.
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