2SA2061 Datasheet - Toshiba Semiconductor

2SA2061 Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2061 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SA2061 Unit: mm High DC current gain: hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.19 V (max) High-speed switching: tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emi.

2SA2061_ToshibaSemiconductor.pdf