2SA2056 Datasheet - Toshiba Semiconductor

2SA2056 Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2056 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max) High-speed switching: tf = 90 ns (typ.) 2SA2056 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltag.

2SA2056_ToshibaSemiconductor.pdf