2SA2065 Datasheet - Toshiba Semiconductor

2SA2065 Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2065 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SA2065 Unit: mm High DC current gain: hFE = 200 to 500 (IC = 0.15 A) Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 37 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-em.

2SA2065-ToshibaSemiconductor.pdf