2SA2058 Datasheet - Toshiba Semiconductor

2SA2058 Silicon PNP Transistor

2SA2058 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2058 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (IC = 0.2 A) Low collector-emitter saturation voltage: VCE (sat) = 0.19 V (max) High-speed switching: tf = 25 ns (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base .

2SA2058_ToshibaSemiconductor.pdf