2SA2070 Datasheet - Toshiba Semiconductor

2SA2070 Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2070 High-Speed Switching Applications DC-DC Converter Applications 2SA2070 Unit: mm High DC current gain: hFE = 200 to 500 (IC = -0.1 A) Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (max) High-speed switching: tf = 70 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC .

2SA2070 Features

* EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AN

2SA2070_ToshibaSemiconductor.pdf