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2SA2059 - Silicon PNP Transistor

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Part number 2SA2059
Manufacturer Toshiba Semiconductor
File Size 158.06 KB
Description Silicon PNP Transistor
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TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2059 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SA2059 Unit: mm • High DC current gain: hFE = 200 to 500 (IC = −0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max) • High-speed switching: tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −20 V Collector-emitter voltage VCEO −20 V Emitter-base voltage VEBO −7 V DC Collector current IC −3.0 A Pulse ICP −5.0 JEDEC ― Base current IB −0.3 A JEITA SC-62 Collector power dissipation Junction temperature DC t = 10 s PC 1.0 W (Note) 2.5 Tj 150 °C TOSHIBA 2-5K1A Weight: 0.05 g (typ.
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