Datasheet4U Logo Datasheet4U.com

2SC5785 Datasheet - Toshiba Semiconductor

2SC5785 NPN TRANSISTOR

2SC5785 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5785 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 25 ns (typ.) Industrial Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector curren.

2SC5785 Datasheet (182.91 KB)

Preview of 2SC5785 PDF
2SC5785 Datasheet Preview Page 2 2SC5785 Datasheet Preview Page 3

Datasheet Details

Part number:

2SC5785

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

182.91 KB

Description:

Npn transistor.

📁 Related Datasheet

2SC5781 NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)

2SC5784 NPN Transistor (Toshiba Semiconductor)

2SC5787 NPN SILICON RF TRANSISTOR (NEC)

2SC5788 NPN Transistor (Panasonic Semiconductor)

2SC570 SILICON NPN TRANSISTOR (Toshiba)

2SC5700 NPN TRANSISTOR (Hitachi Semiconductor)

2SC5700 Silicon NPN Transistor (Renesas)

2SC5702 Silicon NPN Epitaxial Type Transistor (Renesas)

TAGS

2SC5785 NPN TRANSISTOR Toshiba Semiconductor

2SC5785 Distributor