2SK2698 Datasheet - Toshiba Semiconductor

2SK2698 Silicon N-Channel MOSFET

2SK2698 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2698 DC DC Converter, Relay Drive and Motor Drive Applications z Low drain source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.35 Ω (typ.) : |Yfs| = 11 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain source voltage D.

2SK2698 Features

* he RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of no

2SK2698_ToshibaSemiconductor.pdf