K2542 Datasheet - Toshiba Semiconductor

K2542 2SK2542

2SK2542 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2542 Switching Regulator Applications Unit: mm z 4-V gate drive z Low drain source ON-resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain source.

K2542 Features

* ls as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damag

K2542-ToshibaSemiconductor.pdf