K2599 2SK2599

Toshiba Semiconductor

Description

2SK2599 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSV) www.DataSheet4U.com 2SK2599 Unit: mm : RDS (ON) = 2.9 Ω (typ.) : .

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Datasheet Specifications

Part number: K2599
Manufacturer: Toshiba ↗ Semiconductor
File Size: 754.88 KB
Datasheet: K2599_ToshibaSemiconductor.pdf
Description: 2SK2599

Applications

* z Low drain
* source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain
* source voltage Drain
* gate vo

K2599 Distributors

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K2599 2SK2599 Toshiba Semiconductor

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