K2662 Datasheet - Toshiba Semiconductor

K2662 2SK2662

2SK2662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2662 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain source ON resistance : RDS (ON) = 1.35 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Uni.

K2662_ToshibaSemiconductor.pdf