MP4025 Datasheet - Toshiba Semiconductor

MP4025 Power Transistor

www.DataSheet4U.com MP4025 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (darlington power transistor 4 in 1) MP4025 High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pin) Built-in resistance (RB). Surge voltage is clamped by zener diode (C-B). Low VCE (sat): VCE (sat) = 1.2 V (max) (IC = 0.5 A, VBH = 4.2 V) High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 0.7 A).

MP4025_ToshibaSemiconductor.pdf